MRF6P24190HR6

Overview

The MRF6P24190HR6 is an LDMOS RF power transistor manufactured by NXP USA Inc. It operates at a frequency of 2.39 GHz with a gain of 14 dB. The device is rated for a drain voltage of 28 V and a maximum drain-source voltage of 68 V. It delivers an output power of 40 W with a test current of 1.9 A. The component utilizes the NI-1230 package and is designed for base station mounting.

Feature Summary

• Utilizes LDMOS technology for high-frequency RF applications
• Designed for base station mounting in the NI-1230 package

Applications

• Base station amplification
• RF power amplification

Procurement Notes

Verify the part status as discontinued before procurement planning. Confirm RoHS compliance and moisture sensitivity level (MSL 3) requirements for storage and handling. Ensure the NI-1230 package footprint matches the design layout. Check for authorized distributors offering remaining stock or valid obsolescence management options.

Selection Notes

Select this component for designs requiring 40W output at 2.39 GHz with 14dB gain. Ensure the circuit supports a 28V operating voltage and 68V breakdown rating. Verify thermal management capabilities for the NI-1230 package. Consider availability constraints due to discontinuation status when finalizing the bill of materials.

Part Context

This device belongs to the MRF6 series of RF MOSFETs from NXP USA Inc. It is categorized under discrete semiconductor products, specifically RF FETs and MOSFETs. The part is identified by the manufacturer product number MRF6P24190HR6 and is associated with the NI-1230 supplier device package.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.