MRF6P3300HR5

Overview

The MRF6P3300HR5 is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications operating between 470 MHz and 860 MHz. It features high gain and broadband performance, making it suitable for large-signal common-source amplifier applications in 32-volt analog or digital television transmitter equipment. The device is qualified for up to 32 VDD operation and includes integrated ESD protection.

Feature Summary

• Designed specifically for push-pull operation only
• Internally matched on both input and output ports for ease of use
• Capable of handling 10:1 VSWR at 32 Vdc and 860 MHz with 300 Watts CW output power

Applications

• Large-signal, common-source amplifier applications
• Analog television transmitter equipment
• Digital television (DVB-T) transmitter equipment

Procurement Notes

Verify the specific ordering suffix R5 against current procurement requirements. Confirm that the component is intended exclusively for push-pull configurations as specified in the datasheet. Ensure the design accommodates the maximum ratings for drain-source voltage and junction temperature during operation.

Selection Notes

Select this component when designing broadband amplifiers within the 470-860 MHz range requiring high power output at 32 volts. Consider the internal matching network which simplifies circuit design. Evaluate thermal management strategies carefully, as continuous use at maximum temperatures affects MTTF.

Part Context

This part belongs to the MRF6P3300H series of RF Power Field Effect Transistors manufactured by Freescale Semiconductor, now NXP Semiconductors. The HR5 suffix indicates the device is supplied in tape and reel packaging containing 50 units per 56 mm, 13 inch reel.

Replacement Considerations

The MRF6P3300HR5 has been replaced by the MRFE6P3300HR5. Refer to Device Migration PCN12895 for detailed information regarding the transition from the MRF6P3300H series to the MRFE6P3300H series.