MRF6S19100HR3

Overview

The MRF6S19100HR3 is an N-channel enhancement-mode lateral MOSFET designed for RF power applications. It operates at a frequency of 1.99 GHz with a typical output power of 22 watts. The device features a voltage rating of 68 volts and a test voltage of 28 volts, achieving a gain of 14.5 dB. Packaged in a TO-272BB format, it supports a current rating of 10 microamperes and a test current of 950 milliamperes.

Feature Summary

• N-channel enhancement-mode lateral MOSFET technology
• Internally matched for ease of use
• Integrated ESD protection
• Qualified up to a maximum of 32 VDD operation

Applications

• N-CDMA base station applications
• TDMA amplifier applications
• Multicarrier amplifier applications
• Class AB PC/PCS/cellular radio applications
• WLL applications

Procurement Notes

Verify the specific suffix designation against official documentation to confirm packaging configuration and unit count per reel. Ensure compatibility with system voltage requirements and thermal management specifications before integration. Cross-reference the manufacturer datasheet revision history to validate current production status and any potential design changes affecting performance parameters or pin assignments.

Selection Notes

Select this component for systems requiring high linearity and efficiency in cellular infrastructure. The internal matching network simplifies circuit design by reducing external component count. Consider the ruggedness capabilities and VSWR tolerance when operating in environments with potential impedance mismatches. Evaluate thermal dissipation requirements based on the specified output power and drain efficiency metrics.

Part Context

This part belongs to the MRF6 series of RF power field-effect transistors manufactured by Freescale Semiconductor. These devices are engineered specifically for demanding wireless communication base station environments. The series utilizes LDMOS technology to provide robust performance across various cellular standards and frequency bands.

Replacement Considerations

Consult official substitution guides for compatible alternatives within the same product family. Verify that any replacement maintains identical electrical characteristics, package dimensions, and thermal properties to ensure seamless integration without redesigning the host application circuitry.