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The MRF6S20010GNR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for general-purpose applications in the 1600 to 2200 MHz frequency range. It supports Class A and Class AB operation with internal input matching, qualified up to 32 V drain-source voltage. The device features integrated ESD protection and a plastic package capable of 225°C junction temperature. Typical performance at 28 V includes 10 W PEP output with 15.5 dB gain and 36% efficiency.
Verify the specific GN suffix indicates gull-wing leads suitable for surface mount or through-hole assembly variations compared to straight lead versions. Confirm RoHS compliance status as datasheets may vary by revision. Ensure the ordering code matches the required tape and reel specifications for automated manufacturing processes.
Select this component for wideband applications requiring moderate power output between 1600 and 2200 MHz. Consider the internal matching network to reduce external component count. Evaluate thermal management requirements given the 225°C junction capability. Verify bias conditions align with the specified 28 V typical operating voltage for optimal linearity.
This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family, now under NXP Semiconductors. It is a lateral N-channel MOSFET specifically engineered for cellular infrastructure and wireless communication equipment. The device complements other RF transistors in the portfolio designed for similar frequency bands and modulation schemes.
The MRF6S20010NR1 serves as a direct functional replacement with identical electrical characteristics but utilizes straight leads instead of gull-wing configuration. Verify mechanical footprint compatibility before substitution.