MRF6S21050LSR5

$57.04

Description：RF MOSFET LDMOS 28V NI400
Series：-

SKU:697b17c71cb6 Category: RF FETs, MOSFETs Brand: Freescale Semiconductor

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V NI400
Series：-
Mfr：Freescale Semiconductor
Package：Bulk
Technology：LDMOS
Frequency：2.16GHz
Gain：16dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：450 mA
Power - Output：11.5W
Voltage - Rated：68 V
Grade：-
Qualification：-
Mounting Type：-
Package / Case：NI-400S
Supplier Device Package：NI-400S
Configuration：-

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MRF6S21050LSR5

Overview

The MRF6S21050LSR5 is an RF MOSFET manufactured by Freescale Semiconductor, designed for base station applications. It operates at a frequency of 2.16 GHz with a continuous drain current of 450 mA and a breakdown voltage of 28 V. The device delivers 11.5 W of output power with a gain of 16 dB. It utilizes the NI-400S package.

Feature Summary

Designed for W-CDMA base station applications
Suitable for TDMA, CDMA, and multicarrier amplifier applications

Applications

W-CDMA base stations
TDMA amplifiers
CDMA amplifiers
Multicarrier amplifiers

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm datasheet alignment with specific operational requirements. Ensure compliance with RoHS3 standards and check for any specific handling instructions related to the NI-400S package during procurement processes.

Selection Notes

Select this component for high-frequency RF applications requiring stable performance in multicarrier environments. Consider the 2.16 GHz operating frequency and 11.5 W output power when designing amplifier stages. Evaluate thermal management needs associated with the NI-400S package for optimal system integration.

Part Context

Freescale Semiconductor has been acquired by NXP Semiconductors. This part belongs to the RF FET/MOSFET category, specifically tailored for wireless communication infrastructure. The MRF6S series indicates LDMOS technology optimized for cellular base station power amplification tasks.