MRF6S21140HR3

Overview

The MRF6S21140HR3 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 30 Watts average output power at a 28 Vdc drain supply with a quiescent current of 1200 mA. The device provides a typical power gain of 15.5 dB and a drain efficiency of 27.5%. It features internal matching, ESD protection, and RoHS compliance.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched input and output networks
• Integrated electrostatic discharge protection
• Qualified for operation up to 32 Vdc

Applications

• W-CDMA base station amplifiers
• TDMA and CDMA multicarrier amplifiers
• Class AB PCN-PCS/cellular radio systems
• Wireless Local Loop (WLL) applications

Procurement Notes

Verify the R3 suffix indicates tape and reel packaging containing 250 units per 56 mm reel. Confirm the component meets RoHS standards. Check the manufacturer's official documentation for the latest status regarding availability and lifecycle management before initiating procurement processes.

Selection Notes

Select this component for designs requiring high linearity in dual-carrier W-CDMA environments. Ensure the thermal management system supports the specified junction temperature limits. Validate impedance parameters against the specific test circuit requirements provided in the datasheet for optimal performance.

Part Context

This part belongs to the MRF6S series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now NXP USA Inc. The HR3 variant specifically denotes the reel packaging format. It shares architectural similarities with the MRF6S23140H but is tuned for the lower 2110–2170 MHz frequency range.

Replacement Considerations

The MRF6S21140HSR3 serves as the leaded package equivalent. Verify pinout compatibility and thermal resistance differences when substituting between the HR3 and HSR3 variants.