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The MRF6S23100HSR5 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 2300 and 2400 MHz. It supports WiMAX, WiBro, and multicarrier amplifier functions in Class AB and C configurations. The device features internal matching and ESD protection, qualified up to 32 Vdc drain operation. Typical two-carrier W-CDMA performance at 28 Vdc and 1000 mA quiescent current yields 20 Watts average output power with 15.4 dB gain and 23.5% efficiency.
Verify the specific suffix against official documentation to confirm package style and reel specifications. Confirm RoHS compliance status and environmental declarations prior to procurement. Ensure design parameters align with the manufacturer's thermal and electrical limits. Validate component authenticity through authorized distribution channels.
Select this component for broadband RF power amplification within the 2300 to 2400 MHz range. Evaluate thermal management requirements based on junction-to-case resistance values under specified operating conditions. Consider the internal matching characteristics when designing impedance networks. Verify that the application signal profile matches the tested linearity and efficiency benchmarks.
This part belongs to the MRF6S series of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor. These devices are engineered specifically for high-linearity wireless communication infrastructure. The NI-780S package provides robust mechanical stability and efficient thermal dissipation for demanding base station environments.
Consult official replacement lists for discontinued or alternative parts. Verify pinout compatibility and thermal interface dimensions before substitution. Ensure electrical parameters meet or exceed original design specifications.