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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V TO270-2
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：2.6GHz
- Gain：14dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：160 mA
- Power - Output：3W
- Voltage - Rated：68 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：TO-270BA
- Supplier Device Package：TO-270-2 GULL
- Configuration：-
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Overview
The MRF6S27015GNR1 is an N-channel enhancement-mode lateral DMOS RF power transistor manufactured by Freescale Semiconductor. It operates within the 2300 to 2700 MHz frequency range, delivering 3 watts of average output power at a drain voltage of 28 volts. The device provides a gain of 14 dB with a maximum gate current of 160 mA. Packaged in a TO-270-2 gull-wing leaded format, it is designed for robust performance in radio frequency applications.
Feature Summary
- N-channel enhancement-mode lateral DMOS construction
- Optimized for high-frequency RF power amplification
- Leaded TO-270-2 package for thermal efficiency
Applications
- CDMA base station power amplifiers
- WiMAX and WiBro infrastructure systems
- Broadband Wireless Access (BWA) transmitters
- OFDM multicarrier Class applications
Procurement Notes
Verify component authenticity through authorized channels due to potential availability issues. Confirm RoHS compliance status as indicated in official documentation. Check for obsolescence notices or production lifecycle changes prior to procurement. Ensure storage conditions meet manufacturer specifications to maintain device integrity.
Selection Notes
Select this component for designs requiring 3W output in the 2.3-2.7 GHz band. Evaluate thermal management requirements for the TO-270-2 package. Ensure bias circuits support the 28V drain voltage and 160mA gate current limits. Verify impedance matching networks align with the specified frequency range for optimal gain.
Part Context
This part belongs to the MRF6S series of RF power FETs from Freescale Semiconductor. These devices are engineered for cellular and broadband communication base stations. The series utilizes lateral DMOS technology to balance power density and linearity. This specific model targets S-band frequencies for modern wireless standards.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter alignment before replacement. Consider updated family members if available. Ensure mechanical footprint matches the TO-270-2 gull-wing configuration.
