MRF6V10010NR4

Overview

The MRF6V10010NR4 is an N-Channel Enhancement-Mode Lateral MOSFET designed for pulsed applications operating between 960 and 1400 MHz. It features a drain-source breakdown voltage of 100 Vdc and operates with a maximum drain-source voltage of 50 Vdc. At 1090 MHz, it delivers 10 Watts peak output power (2 W average) with a pulse width of 100 μsec and a 20% duty cycle. Typical performance at these conditions includes a power gain of 25 dB and a drain efficiency of 69%. The device is characterized by series equivalent large-signal impedance parameters.

Feature Summary

• Integrated ESD protection
• Qualified up to a maximum of 50 VDD operation
• Greater negative gate-source voltage range for improved Class C operation

Applications

• Pulsed RF power amplifier circuits
• Applications requiring frequencies between 960 and 1400 MHz
• Systems utilizing 1% to 20% duty cycles

Procurement Notes

Verify the datasheet revision history and package style against current manufacturing standards. Confirm that the R4 suffix corresponds to the required tape and reel quantity. Ensure compliance with RoHS directives and check for any product change notifications regarding moisture sensitivity levels or material declarations before finalizing procurement specifications.

Selection Notes

Select this component when designing for pulsed RF environments within the 960 to 1400 MHz band. It is suitable for applications requiring high peak power output with moderate average power constraints. Consider its thermal characteristics and junction temperature limits when determining heat dissipation requirements for the specific duty cycle and ambient conditions of the target system.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistor family. It is a lateral N-channel MOSFET specifically engineered for pulsed operations. The device utilizes a PLD-1.5 plastic package (Case 466-03) and is internally matched using series equivalent large-signal impedance parameters for ease of integration into RF circuits.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume cross-compatibility based on generic specifications alone.

FAQ

What is the typical power gain at 1090 MHz?

The typical power gain is 25 dB under standard test conditions.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage rating is 100 Vdc.

Is the device qualified for continuous wave operation?

No, the device is designed for pulsed applications with duty cycles ranging from 1% to 20%.