MRF6V12250HR5

Overview

The MRF6V12250HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for RF power applications operating between 960 and 1215 MHz. It features a NI-780 package (Case 465-06) with integrated ESD protection and internal matching. The device supports up to 50 Vdc drain-source voltage and handles pulsed output power of 275 Watts peak at 1030 MHz, or 250 Watts peak across the broadband range. It exhibits a typical power gain of 20.3 dB and drain efficiency of 65.5% under specified pulsed conditions.

Feature Summary

• Internally matched input and output circuits for simplified design integration
• Integrated electrostatic discharge (ESD) protection mechanisms
• Qualified for operation with a maximum drain-source voltage of 50 Vdc
• Enhanced negative gate-source voltage range optimized for Class C operation

Applications

• Pulsed RF power amplifier stages
• Broadband transmitter systems within the 960-1215 MHz frequency band
• Military and aerospace communication equipment requiring high reliability

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status and material declarations prior to assembly. Ensure thermal management solutions align with the specified junction-to-case thermal resistance characteristics. Validate that the NI-780 package dimensions match the target PCB footprint requirements exactly.

Selection Notes

Select this component when designing amplifiers for the L-band spectrum requiring high peak power handling capabilities. Consider the internal matching network which reduces external component count but limits impedance flexibility. Evaluate thermal constraints carefully as continuous operation at maximum ratings affects mean time to failure. Ensure driver stages can provide the necessary gate drive voltages for optimal performance.

Part Context

This part belongs to the MRF6V series of lateral N-channel RF power MOSFETs manufactured by NXP Semiconductors. It succeeds earlier Freescale Semiconductor designs in the same family. The HR5 suffix indicates specific tape and reel packaging configurations distinct from other variants like the R3 or SR3 suffixes found in the broader product line.

Replacement Considerations

MRF6V12250H serves as the base model identifier. MRF6V12250HR3 and MRF6V12250HSR3 are related variants differing primarily in packaging style and reel specifications rather than electrical function.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Does the device require external matching networks?

No, the device is internally matched on both input and output ports.

What is the typical power gain at 1030 MHz?

The typical power gain is 20.3 dB under pulsed conditions at 1030 MHz.