MRF6V12500GSR5

Overview

The MRF6V12500GSR5 is a 500 W peak RF power LDMOS transistor designed for pulsed applications between 960 and 1215 MHz. It operates at 50 V with a drain-source breakdown voltage of 110 Vdc. The device delivers 19.7 dB gain and 62% drain efficiency in narrowband Mode S ELM pulse conditions. It features an integrated NI-780GS-2L package, internal matching, and ESD protection. Maximum ratings include a junction temperature of 225 °C and a gate-source voltage range from -6.0 to +10 Vdc.

Feature Summary

• Internally matched input and output circuits for simplified design integration
• Integrated electrostatic discharge (ESD) protection meeting specified industry standards
• Extended negative gate-source voltage range optimized for improved Class C operation

Applications

• Distance measuring equipment (DME)
• Mode S ELM transponders
• Secondary radars for air traffic control

Procurement Notes

Verify the specific ordering suffix GSR5 against current NXP documentation to confirm tape and reel specifications. Confirm that the component status remains active or qualified for production before initiating designs. Ensure compliance with RoHS directives and check for any recent product change notices affecting material declarations or lead-free soldering parameters.

Selection Notes

Select this component for high-power pulsed radar systems requiring reliable performance within the 960 to 1215 MHz band. Evaluate thermal management requirements carefully, as continuous use at maximum temperatures affects mean time to failure. Consider the internal matching capabilities to reduce external circuit complexity while maintaining required impedance characteristics.

Part Context

This part belongs to the MRF6V12500H series of RF power LDMOS transistors manufactured by NXP Semiconductors. The series is engineered specifically for demanding aviation and air traffic control applications. The GSR5 designation indicates a specific tape and reel packaging configuration suitable for automated assembly processes.

Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. Cross-reference electrical parameters and pin configurations when evaluating alternatives.