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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.03GHz
- Gain：19.7dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：200 mA
- Power - Output：500W
- Voltage - Rated：110 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-780S
- Supplier Device Package：NI-780S
- Configuration：-
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Overview
The MRF6V12500HSR3 is a lateral N-channel RF power LDMOS transistor designed for pulsed applications operating between 960 and 1215 MHz. It delivers a peak output power of 500 W at 50 V drain-source voltage. The device features an internally matched input and output, eliminating the need for external matching networks. It is characterized with series equivalent large-signal impedance parameters and includes integrated ESD protection. The component utilizes the NI-780S-2L package.
Feature Summary
- Internally matched on both input and output ports to simplify circuit design
- Integrated electrostatic discharge (ESD) protection mechanisms
- Qualified for operation up to a maximum of 50 VDD supply voltage
- Optimized negative gate-source voltage range for improved Class C operation
Applications
- Distance measuring equipment (DME)
- Transponders
- Secondary radars for air traffic control
- Mode S ELM pulse applications
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current documentation to confirm the correct tape and reel configuration. Confirm that the intended application environment remains within the specified thermal limits, as continuous use at maximum temperatures affects mean time to failure. Ensure compatibility with the NI-780S-2L package outline during mechanical integration.
Selection Notes
Select this component when designing systems requiring high peak power in the 960 to 1215 MHz band. The internal matching reduces component count and layout complexity compared to unmatched devices. Consider the thermal impedance characteristics and junction temperature limits when determining heat sink requirements for sustained pulsed duty cycles.
Part Context
This part belongs to the MRF6V12500H family of RF power LDMOS transistors manufactured by NXP Semiconductors. The HS suffix indicates the specific NI-780S-2L surface mount package variant. This family is engineered specifically for aviation and radar frequencies where high reliability and pulse handling capabilities are critical.
Replacement Considerations
MRF6V12500HR5
FAQ
What is the maximum drain-source breakdown voltage?
The Drain-Source Breakdown Voltage (V(BR)DSS) is 110 Vdc.
Does the device require external matching components?
No, the device is internally matched on both the input and output sides.
What is the typical power gain at 1030 MHz?
The typical power gain (Gps) is 19.7 dB under narrowband short pulse conditions.
