MRF6V2300NR5

Description：RF MOSFET LDMOS 50V TO270-4
Series：-

SKU:8d119f8a2722 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V TO270-4
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：220MHz
Gain：25.5dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：900 mA
Power - Output：300W
Voltage - Rated：110 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-270AB
Supplier Device Package：TO-270 WB-4
Configuration：-

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MRF6V2300NR5

Overview

The MRF6V2300NR5 is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband applications up to 600 MHz. It operates at a maximum drain-source voltage of 110 Vdc and delivers 300 Watts CW output power at 220 MHz with 50 Vdc supply. The device features an integrated ESD protection structure rated Class 2 for the human body model. It utilizes a TO-272WB-4 plastic package capable of withstanding junction temperatures up to 225°C.

Feature Summary

Broadband operation capability across frequencies up to 600 MHz
Integrated electrostatic discharge (ESD) protection circuitry
High thermal tolerance with a 225°C maximum operating junction temperature
Qualified for continuous operation at a maximum of 50 Vdc drain-source voltage

Applications

Industrial, Medical, and Scientific (IMS) equipment amplifiers
Large-signal CW driver stages in RF transmission systems
Broadband RF power amplifier designs requiring unmatched configurations

Procurement Notes

Verify the specific suffix against official manufacturer documentation to confirm packaging details. Confirm RoHS compliance status and material declarations prior to procurement. Ensure the ordering code matches the required reel quantity specifications defined in the datasheet.

Selection Notes

Select this component for high-power single-ended applications requiring wide bandwidth without complex matching networks. Evaluate thermal management requirements carefully due to the high power density and junction temperature limits. Validate input and output impedance parameters against the specific operating frequency within the 10-600 MHz range.

Part Context

This part belongs to the MRF6V series of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor, now NXP Semiconductors. These devices are engineered specifically for robust performance in demanding RF environments where high linearity and power handling are critical.