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The MRF6V4300NR5 is a lateral N-channel single-ended broadband RF power MOSFET designed for CW large-signal output and driver applications up to 600 MHz. It operates at a maximum drain-source voltage of 110 Vdc and supports a case operating temperature of 150 °C with a junction temperature capability of 225 °C. At 450 MHz, it delivers 300 Watts CW output power with 22 dB gain and 60% drain efficiency under 50 Vdc bias. The device handles 10:1 VSWR and includes integrated ESD protection.
Verify the specific ordering suffix against official manufacturer documentation to confirm packaging configuration. Confirm RoHS compliance status and environmental declarations prior to procurement. Ensure mounting procedures strictly follow application notes AN1907 or AN3263 to prevent thermal damage during installation.
Select this component for high-power linear amplifier designs requiring broad frequency coverage without complex matching networks. Evaluate thermal management requirements carefully due to the high power density and junction temperature limits. Verify that the system can support the required gate threshold voltage and quiescent current settings for optimal Class AB or C operation.
This part belongs to the Freescale/NXP MRF6V series of lateral N-channel enhancement-mode MOSFETs. These devices are engineered specifically for robust performance in demanding RF environments where wide bandwidth and high power handling are critical. The series utilizes advanced silicon processes to ensure reliability and consistent electrical characteristics across the specified frequency range.
MRF6V4300NBR1
The maximum operating junction temperature is rated at 225 °C.
Yes, the MRF6V4300NR5 features integrated electrostatic discharge (ESD) protection.
The typical power gain is 22 dB when operating at 450 MHz with 300 Watts output power.