MRF6V4300NR5

MRF6V4300NR5

  • Description:RF MOSFET LDMOS 50V TO270-4
  • Series:-

SKU:3da519772d56 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V TO270-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:450MHz
  • Gain:22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:900 mA
  • Power - Output:300W
  • Voltage - Rated:110 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270AB
  • Supplier Device Package:TO-270 WB-4
  • Configuration:-

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MRF6V4300NR5

Overview

The MRF6V4300NR5 is a lateral N-channel single-ended broadband RF power MOSFET designed for CW large-signal output and driver applications up to 600 MHz. It operates at a maximum drain-source voltage of 110 Vdc and supports a case operating temperature of 150 °C with a junction temperature capability of 225 °C. At 450 MHz, it delivers 300 Watts CW output power with 22 dB gain and 60% drain efficiency under 50 Vdc bias. The device handles 10:1 VSWR and includes integrated ESD protection.

Feature Summary

  • Broadband operation from 10 to 600 MHz
  • High thermal stability with 225°C capable plastic package
  • Integrated electrostatic discharge (ESD) protection
  • Suitable for industrial, medical, and scientific applications

Applications

  • Industrial heating systems
  • Medical equipment amplifiers
  • Scientific instrumentation drivers
  • Broadband RF power amplification

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm packaging configuration. Confirm RoHS compliance status and environmental declarations prior to procurement. Ensure mounting procedures strictly follow application notes AN1907 or AN3263 to prevent thermal damage during installation.

Selection Notes

Select this component for high-power linear amplifier designs requiring broad frequency coverage without complex matching networks. Evaluate thermal management requirements carefully due to the high power density and junction temperature limits. Verify that the system can support the required gate threshold voltage and quiescent current settings for optimal Class AB or C operation.

Part Context

This part belongs to the Freescale/NXP MRF6V series of lateral N-channel enhancement-mode MOSFETs. These devices are engineered specifically for robust performance in demanding RF environments where wide bandwidth and high power handling are critical. The series utilizes advanced silicon processes to ensure reliability and consistent electrical characteristics across the specified frequency range.

Replacement Considerations

MRF6V4300NBR1

FAQ

What is the maximum junction temperature rating?

The maximum operating junction temperature is rated at 225 °C.

Does the device include built-in protection features?

Yes, the MRF6V4300NR5 features integrated electrostatic discharge (ESD) protection.

What is the typical power gain at 450 MHz?

The typical power gain is 22 dB when operating at 450 MHz with 300 Watts output power.

MRF6V4300NR5MRF6V4300NR5

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