MRF6VP121KHR6

Overview

The MRF6VP121KHR6 is an N-channel enhancement-mode lateral MOSFET designed for pulsed RF applications between 965 and 1215 MHz. It delivers 1000 Watts peak output power at 1030 MHz with a drain efficiency of 56% under standard test conditions (VDD = 50 V, IDQ = 150 mA). The device features a maximum drain-source voltage rating of 110 Vdc and operates up to a junction temperature of 225 °C. It provides approximately 20 dB of power gain and is capable of handling a 5:1 VSWR.

Feature Summary

• Designed specifically for push-pull operation configurations
• Internally matched for ease of circuit integration
• Integrated electrostatic discharge protection
• Qualified for operation up to a maximum of 50 Vdc

Applications

• Pulsed radar systems operating in the L-band
• Broadband radio communication transmitters
• High-power pulsed amplifier stages

Procurement Notes

Verify the specific suffix KHR6 against official documentation to confirm tape and reel packaging specifications. Confirm that the component meets RoHS compliance requirements as stated in the datasheet. Ensure the ordering quantity aligns with the manufacturer's specified reel size of 150 units per 56 mm reel. Validate all electrical parameters against the latest revision of the data sheet before finalizing procurement.

Selection Notes

Select this component when designing high-power pulsed amplifiers requiring broadband performance across the 965 to 1215 MHz range. The internal matching simplifies input and output network design compared to unmatched devices. Consider the thermal resistance characteristics and the requirement for a case temperature of 67°C to maintain optimal reliability during continuous pulsed operation.

Part Context

This part belongs to the MRF6VP series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now NXP USA Inc. These devices are characterized using series equivalent large-signal impedance parameters. The product line is engineered for robust performance in demanding RF environments, offering high power density and durability suitable for critical communication infrastructure.

Replacement Considerations

Consult official distributor databases or manufacturer cross-reference lists for verified substitute part numbers. Do not assume functional equivalence based on similar package types or general family characteristics without explicit confirmation from the original equipment manufacturer.