MRF6VP41KHR6

Overview

The MRF6VP41KHR6 is an N-Channel Enhancement-Mode Lateral MOSFET designed for pulse and CW wideband applications up to 500 MHz. It operates at a maximum drain-source voltage of 110 Vdc with a typical peak output power of 1000 W at 450 MHz (200 W average). The device provides a power gain of approximately 20 dB and a drain efficiency of 64% under pulsed conditions. It features integrated ESD protection, qualified operation up to 50 Vdd, and suitability for push-pull configurations.

Feature Summary

• Designed for both pulsed and continuous wave (CW) wideband RF applications
• Capable of handling high VSWR loads without damage
• Includes integrated electrostatic discharge (ESD) protection
• Optimized for balanced push-pull circuit topologies

Applications

• Industrial, Medical, and Scientific (IMS) equipment
• Pulsed radar systems
• Broadband RF power amplifiers

Procurement Notes

Verify the specific ordering suffix against current availability as manufacturing status may change. Confirm package type matches design requirements. Ensure compliance with RoHS directives if applicable. Check for any product change notices affecting thermal or electrical characteristics. Validate date codes against reliability standards.

Selection Notes

Select this component for designs requiring high peak power in broadband ranges up to 500 MHz. Consider thermal management capabilities for CW operation versus pulsed duty cycles. Evaluate impedance matching networks based on provided series equivalent parameters. Verify gate-source voltage limits for Class C biasing requirements.

Part Context

This part belongs to the MRF6VP41KH family of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor (now NXP). These devices are engineered for robust performance in demanding RF environments, offering high breakdown voltage and significant power handling capabilities within a single package suitable for balanced amplifier stages.

Replacement Considerations

MRF6VP41KHSR6