MRF6VP41KHR7

Description：RF MOSFET LDMOS 50V NI1230
Series：-

SKU:9e46e83dd880 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V NI1230
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：LDMOS
Frequency：450MHz
Gain：20dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：150 mA
Power - Output：1000W
Voltage - Rated：110 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-1230
Supplier Device Package：NI-1230
Configuration：Dual

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MRF6VP41KHR7

Overview

The MRF6VP41KHR7 is an N-Channel Enhancement-Mode Lateral MOSFET designed for pulse and CW wideband applications up to 500 MHz. It operates at a maximum drain-source voltage of 110 Vdc with a total device dissipation of 1333 W in continuous wave mode. The component features integrated ESD protection and is optimized for push-pull configurations. It utilizes the NI-1230 package.

Feature Summary

Designed for high-power industrial, medical, and scientific (IMS) applications
Capable of handling 10:1 VSWR under specified operating conditions
Includes integrated electrostatic discharge (ESD) protection
Optimized for push-pull operation with enhanced Class C bias range

Applications

Industrial heating systems
Medical equipment RF generators
Scientific instrumentation
ISM band transmitters

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details. Confirm current manufacturing status as product lifecycle changes may occur. Ensure compatibility with existing thermal management solutions before procurement.

Selection Notes

Evaluate thermal resistance requirements based on the intended duty cycle and case temperature. Verify that the driving circuit can provide the necessary gate-source voltage range for optimal Class C performance. Ensure the power supply supports the required quiescent current levels.

Part Context

This component belongs to the MRF6VP series of lateral N-channel RF power MOSFETs. These devices are engineered for broadband performance and high peak power output. They are commonly utilized in demanding RF environments requiring robust reliability and linear operation characteristics.