MRF6VP41KHSR7

Description：RF MOSFET LDMOS 50V NI1230
Series：-

SKU:9e923e6cf3ca Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V NI1230
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：450MHz
Gain：20dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：150 mA
Power - Output：1000W
Voltage - Rated：110 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-1230S
Supplier Device Package：NI-1230S
Configuration：Dual

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MRF6VP41KHSR7

Overview

The MRF6VP41KHSR7 is a lateral N-channel enhancement-mode RF power MOSFET designed for pulse and CW wideband applications up to 500 MHz. It operates at 50 Vdc with a drain-source breakdown voltage of 110 Vdc. The device supports push-pull configurations, delivering 1000 W peak output power at 450 MHz (200 W average) with 20% duty cycle. In continuous wave operation at 352.2 MHz, it provides 1000 W CW output. Key electrical characteristics include a typical power gain of 20 dB and a drain efficiency of 64% under pulsed conditions.

Feature Summary

Designed for push-pull operation in industrial, medical, and scientific applications
Integrated ESD protection qualified up to 50 Vdd operation
Greater negative gate-source voltage range for improved Class C operation
Characterized with series equivalent large-signal impedance parameters

Applications

Industrial, Medical, and Scientific (IMS) equipment
Pulse and CW wideband amplifier designs
Push-pull RF power amplifier topologies

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The R6 suffix indicates tape and reel packaging containing 150 units per 56 mm reel. Confirm that the component status aligns with current availability requirements before finalizing procurement plans.

Selection Notes

Select this component for high-power broadband applications requiring robust thermal performance and integrated electrostatic discharge protection. Ensure the design accommodates the specified maximum junction temperature of 225°C and utilizes appropriate heat sinking for continuous wave operations to maintain reliability within the safe operating area.

Part Context

This part belongs to the NXP USA Inc. RF Power Field Effect Transistors family, specifically lateral N-channel devices. It is manufactured by Freescale Semiconductor, Inc., as indicated in the datasheet revision history. The device is housed in Case 375E-04 package style.