MRF7S18125AHR3

Overview

The MRF7S18125AHR3 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It supports Class AB and Class C modulation schemes with a typical drain efficiency of 55% at 125 Watts CW output power (VDD = 28 Volts, f = 1880 MHz). The device features internal input and output matching networks to simplify circuit design. Maximum ratings include a drain-source voltage of +65 Vdc and an operating junction temperature up to 225 °C.

Feature Summary

• Internally matched for ease of use
• Integrated ESD protection
• Characterized with series equivalent large-signal impedance parameters

Applications

• GSM base station amplifiers
• GSM EDGE base station amplifiers
• Class AB cellular base station modulations
• Class C cellular base station modulations

Procurement Notes

Verify the component status as End of Life or obsolete through official manufacturer channels before procurement planning. Confirm RoHS compliance documentation and moisture sensitivity levels. Ensure that the R3 suffix corresponds to the required tape and reel packaging specifications for your assembly line. Validate all electrical parameters against the latest datasheet revisions.

Selection Notes

Select this component for high-power RF applications requiring integrated matching within the 1800-2000 MHz band. Consider the thermal resistance characteristics and maximum junction temperature limits for heat sink design. Evaluate the internal ESD protection requirements against system-level standards. Verify compatibility with Class AB and Class C biasing configurations for target modulation schemes.

Part Context

This part belongs to the Freescale Semiconductor RF Power LDMOS transistor family, now under NXP Semiconductors. It utilizes advanced lateral MOSFET technology optimized for wireless infrastructure. The device is housed in a specific plastic package variant designed for high-power dissipation and robust performance in demanding RF environments.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinouts and thermal characteristics carefully when evaluating potential replacements.

FAQ

What is the typical drain efficiency at 125 Watts CW?

The typical drain efficiency is 55% when operating at VDD = 28 Volts, IDQ = 1100 mA, and Pout = 125 Watts CW at 1880 MHz.

Does the device require external matching networks?

No, the MRF7S18125AHR3 is internally matched on both the input and output ports to facilitate easier integration into amplifier designs.

What is the maximum operating junction temperature?

The maximum operating junction temperature is specified as 225 °C.