MRF7S19080HSR3

Overview

The MRF7S19080HSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It delivers 24 Watts average output power at a drain voltage of 28 Volts with a quiescent current of 750 mA. The device features internal matching, integrated ESD protection, and RoHS compliance. It utilizes the NI-780S package and is supplied in tape and reel format.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Extended negative gate-source voltage range to support Class C operation
• Optimized for digital predistortion error correction systems

Applications

• CDMA base station amplifiers
• Multicarrier amplifier applications
• TD-SCDMA cellular radio systems
• PCN-PCS cellular radio applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision status prior to implementation. Ensure thermal management aligns with specified junction temperature limits. Validate impedance parameters against specific application requirements. Check for end-of-life or discontinuation notices from the manufacturer.

Selection Notes

Evaluate thermal resistance characteristics relative to the intended heat sink configuration. Assess compatibility with digital predistortion algorithms for linearity optimization. Verify that the operating frequency band matches the target communication standard. Consider the impact of quiescent current settings on overall system efficiency.

Part Context

This component belongs to the MRF7S series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now part of NXP Semiconductors. The series targets high-performance wireless infrastructure requiring robust linearity and power handling capabilities within compact form factors suitable for modern base station architectures.

Replacement Considerations

MRF7S19080HR3