MRF7S19170HSR3

Overview

The MRF7S19170HSR3 is a high-voltage seventh-generation (HV7) RF LDMOS power transistor manufactured by NXP Semiconductors, formerly Freescale Semiconductor. It operates in the S-band and delivers 170 watts of average output power at 2.8 GHz with a drain voltage of 28 volts. The device utilizes a super-molded plastic package designed to provide thermal and mechanical performance comparable to traditional air-cavity packages while reducing system costs.

Feature Summary

• Utilizes HV7 lateral diffusion metal-oxide semiconductor technology for enhanced reliability and linearity.
• Features a super-molded plastic package that offers cost-effective alternatives to conventional air-cavity designs.
• Engineered to meet stringent performance requirements for wireless infrastructure amplifiers.

Applications

• Base station power amplifiers
• Wireless communication systems
• Broadband infrastructure equipment

Procurement Notes

Verify the manufacturer designation as NXP Semiconductors, which acquired Freescale Semiconductor, when sourcing this component. Confirm the specific suffix 'SR3' corresponds to the required tape-and-reel packaging configuration. Ensure compliance with RoHS standards and check for any lead-free certifications relevant to your assembly process. Cross-reference the datasheet revision to ensure compatibility with current design specifications.

Selection Notes

Select this component for applications requiring high power density in the S-band without the bulk of air-cavity packages. Consider the thermal management capabilities inherent to the super-molded plastic housing. Evaluate the trade-off between cost reduction and performance parity with legacy technologies. Ensure the driving circuitry supports the enhancement mode operation typical of HV7 devices.

Part Context

This transistor belongs to the HV7 family of RF power devices, representing an evolution in LDMOS technology aimed at improving efficiency and ruggedness. The series includes various power levels tailored for different frequency bands within the S-band spectrum. These devices are integral to modernizing wireless infrastructure by enabling more compact and cost-efficient amplifier designs.

Replacement Considerations

Direct replacements may include other HV7 family members such as the MRF7S19120N or MRF7S27130HSR3, depending on specific power and frequency requirements. Verify pinout compatibility and thermal resistance characteristics before substitution. Consult official NXP documentation for detailed cross-reference information and application notes regarding equivalent performance metrics.