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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.99GHz
- Gain：20dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.4 A
- Power - Output：63W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：SOT-957A
- Supplier Device Package：NI-780H-2L
- Configuration：-
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Overview
The MRF7S19210HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It supports Class AB and Class C modulation formats with a drain-source voltage of 65 Vdc and gate-source voltage range of -6.0 to +10 Vdc. The device features integrated ESD protection, internal matching, and RoHS compliance.
Feature Summary
- Internally matched input and output networks for simplified circuit design
- Integrated electrostatic discharge (ESD) protection mechanisms
- Extended negative gate-source voltage range optimized for Class C operation
- Engineered compatibility with digital predistortion error correction systems
Applications
- CDMA base station power amplification
- W-CDMA single-carrier amplifier stages
- Multicarrier cellular radio transmitter modules
- Wireless Local Loop (WLL) signal processing
Procurement Notes
Verify the specific suffix 'R5' against official documentation to confirm tape and reel specifications differ from standard variants. Confirm current manufacturing status as datasheets reference legacy branding. Ensure thermal management aligns with specified junction temperature limits during procurement planning.
Selection Notes
Select this component for wideband RF applications requiring high linearity and efficiency within the 1930-1990 MHz spectrum. Consider its internal matching capabilities to reduce external component count. Evaluate thermal resistance requirements for sustained CW or pulsed operations at specified voltage levels.
Part Context
This lateral N-channel RF power MOSFET belongs to a family of devices optimized for cellular infrastructure. It utilizes silicon technology to deliver high output power with low distortion. The package style facilitates surface mount integration into high-frequency PCB layouts.
Replacement Considerations
Consult official cross-reference lists for direct substitutes. Verify pinout compatibility and thermal characteristics before substituting with similar frequency-rated transistors.
