MRF7S19210HSR5

Overview

The MRF7S19210HSR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It supports Class AB and Class C modulation formats with a typical single-carrier W-CDMA output of 63 Watts average at 28 Volts and 1400 mA quiescent current. The device delivers 20 dB power gain, 29% drain efficiency, and -33 dBc adjacent channel power ratio. It withstands 5:1 VSWR at 32 Vdc and handles up to 190 Watts CW output power.

Feature Summary

• Internally matched input and output networks for simplified circuit integration
• Integrated electrostatic discharge protection mechanisms
• Extended negative gate-source voltage range optimized for Class C operation
• Designed specifically for digital predistortion error correction systems

Applications

• CDMA base station amplifiers
• Class AB cellular base station modulation formats
• Class C cellular base station modulation formats
• Digital predistortion error correction systems

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details. The HS designation indicates a flange mount package variant. Confirm RoHS compliance status and check for any product change notifications or lifecycle updates directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for wideband cellular infrastructure requiring high linearity and power handling. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values under continuous wave conditions. Validate impedance matching networks against the provided series equivalent large-signal impedance parameters for optimal performance.

Part Context

This part belongs to the MRF7S family of RF power lateral N-channel MOSFETs manufactured by NXP USA Inc., formerly Freescale Semiconductor. These devices are engineered for robust performance in demanding wireless communication environments, providing reliable signal amplification across standard cellular frequency bands.

Replacement Considerations

MRF7S19210HR3

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is +65 Vdc.

Does the device support internal matching?

Yes, the device features internally matched input and output networks to facilitate ease of use.

What is the operating junction temperature limit?

The maximum operating junction temperature (TJ) is 225 °C.