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The MRF7S38075HSR3 is an RF Power Field Effect Transistor manufactured by Freescale Semiconductor. It is a silicon N-channel enhancement mode device designed for high-frequency applications within the S-band spectrum. The component utilizes a metal-oxide semiconductor technology and operates in enhancement mode, supporting high power output capabilities suitable for demanding radio frequency environments.
Verify the manufacturer origin as Freescale Semiconductor or its successor entity NXP. Confirm the specific suffix HSR3 matches the required flange mount variant. Ensure RoHS compliance status aligns with current regulatory requirements for the intended deployment region before finalizing procurement orders.
Select this component when S-band operation and high power density are required. The flange mount package facilitates direct heatsinking, making it suitable for applications where efficient thermal dissipation is critical. Verify that the system voltage and frequency ranges match the device's operational specifications to ensure optimal performance and longevity.
This part belongs to the MRF7S series of RF power transistors from Freescale Semiconductor. These devices are engineered for ruggedness and high efficiency in harsh environments. The series typically includes variants optimized for different power levels and frequency bands within the S-band, providing designers with scalable solutions for RF power stages.
Consult official cross-reference data for verified substitutes. Generic equivalents may not match the specific electrical characteristics or package dimensions. Ensure any replacement maintains compatibility with the existing thermal interface and mounting hardware.