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The MRF8372 is an NPN silicon RF bipolar transistor designed for wideband large signal stages in the 800 MHz and UHF frequency ranges. It operates at a specified voltage of 12.5V and frequency of 870 MHz. Key electrical parameters include an output power (POUT) of 750 mW, a minimum power gain (PG) of 8.0 dB, and an efficiency (η) of 60%. The device is constructed using silicon technology and is classified as a low-power RF component.
Verify current availability status as the component may be discontinued or subject to limited supply constraints. Confirm RoHS compliance details through official documentation. Check for authorized distribution channels to ensure authenticity. Validate technical specifications against the latest datasheet before integration into design projects.
Select this component for applications requiring wideband performance in the 800 MHz to UHF spectrum. Ensure the design supports the specified 12.5V operating voltage. Consider thermal management requirements due to power dissipation characteristics. Verify compatibility with surface mount packaging if applicable.
The MRF8372 belongs to the family of RF bipolar transistors manufactured by Microsemi Corporation (now part of Microchip Technology). It serves as a discrete semiconductor device for radio frequency and microwave applications, specifically targeting low-power amplification tasks in specialized communication hardware.
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer resources for potential obsolescence alternatives.