MRF8372R1

Overview

The MRF8372R1 is an NPN silicon RF power transistor manufactured by Microsemi Corporation. It operates at a frequency of 800 MHz with a maximum collector-emitter voltage (VCEO) of 16 V and an emitter-base voltage (VEBO) of 3 V. The device supports a continuous collector current of 200 mA and dissipates up to 2.2 W of power. It features a minimum DC current gain (hFE) of 30 and functions within a temperature range of -65°C to +200°C. The component is housed in an SOIC-8 surface-mount package.

Feature Summary

• High thermal stability enabling operation up to 200°C
• Designed for high-frequency RF applications at 800 MHz
• Robust bipolar construction for reliable power amplification

Applications

• RF power amplification circuits
• Wireless communication systems
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify the specific ordering suffix against official Microsemi documentation to confirm exact electrical characteristics and packaging configuration. Confirm RoHS compliance status through the manufacturer's latest datasheet or environmental declaration before procurement.

Selection Notes

Select this component when designing circuits requiring an NPN RF transistor with a 16 V breakdown voltage and 2.2 W power dissipation capability. Ensure the application environment supports the specified operating temperature range and that the SOIC-8 footprint aligns with the PCB layout requirements.

Part Context

This part belongs to the family of RF Bipolar Transistors produced by Advanced Semiconductor, Inc., which was acquired by Microsemi Corporation. The MRF series is widely recognized for its performance in radio frequency power amplifier designs across various industrial and commercial sectors.

Replacement Considerations

Consult Microsemi technical support for verified cross-reference data. No public substitute part numbers are confirmed in available documentation.