MRF8372R2

Overview

The MRF8372R2 is an NPN silicon RF power transistor manufactured by Advanced Semiconductor, Inc. (formerly Microsemi). It operates at a frequency of 800 MHz with a collector-emitter voltage (VCEO) of 16 V and an emitter-base voltage (VEBO) of 3 V. The device supports a continuous collector current of 200 mA and has a minimum DC current gain (hFE) of 30. Power dissipation is rated at 2.2 W. It functions within a temperature range of -65°C to +200°C and is housed in an SOIC-8 surface-mount package.

Feature Summary

• NPN bipolar power construction for RF applications
• High thermal stability with operation up to 200°C
• Surface-mount SOIC-8 packaging for SMD/SMT installation

Applications

• RF amplifier circuits
• Wireless communication systems
• Industrial RF equipment

Procurement Notes

Verify the manufacturer designation carefully, as the component is produced by Advanced Semiconductor, Inc., despite historical associations with Microsemi. Confirm RoHS compliance status through official documentation before integration. Ensure the SOIC-8 package matches the design footprint requirements. Validate that the 16 V rating meets the circuit's voltage headroom needs.

Selection Notes

Select this component for designs requiring an NPN RF transistor at 800 MHz with moderate power handling. The 2.2 W dissipation limit dictates adequate thermal management strategies. Verify that the 200 mA current capability aligns with the load requirements. Consider the wide operating temperature range for harsh environment suitability.

Part Context

This part belongs to the family of RF bipolar transistors designed for high-frequency performance. It utilizes silicon technology optimized for radio frequency amplification tasks. The transition from Microsemi branding to Advanced Semiconductor reflects corporate restructuring while maintaining product lineage.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.