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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.17GHz
- Gain：14.4dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：150 mA
- Power - Output：16W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：NI-780S-4L
- Supplier Device Package：NI-780S-4L
- Configuration：Dual
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Overview
The MRF8HP21080HSR3 is an RF MOSFET LDMOS device manufactured by NXP USA Inc., designed for base station applications. It operates at a test voltage of 28 V with a maximum rated voltage of 65 V. The component delivers an output power of 16 W and provides a gain of 14.4 dB at a frequency of 2.17 GHz. The drain current is specified at 150 mA during testing. It utilizes the NI-780S-4L package and is supplied in tape and reel packaging.
Feature Summary
- Utilizes LDMOS technology for high-frequency RF performance
- Designed specifically for W-CDMA and LTE cellular base stations
- Supports operation in Class AB and Class C amplifier configurations
Applications
- W-CDMA base station power amplification
- LTE base station power amplification
- Class AB linear amplifier stages
- Class C non-linear amplifier stages
Procurement Notes
Verify the specific suffix HSR3 against the official NXP datasheet to confirm the tape and reel packaging configuration. Confirm that the NI-780S-4L package matches the required thermal and mechanical constraints for the target PCB design. Ensure compliance with RoHS3 standards as indicated in the environmental classification data.
Selection Notes
Select this component when designing for the 2110–2170 MHz band requiring 16 W average output power. Consider the 28 V operating voltage requirement and the need for Class AB or C biasing networks. Evaluate the thermal management capabilities of the NI-780S-4L package against the system's heat dissipation requirements.
Part Context
This part belongs to the MRF8HP series, which targets cellular infrastructure markets. It complements other NXP RF transistors like the MRF8S21120HR3, offering lower power output but optimized for specific efficiency profiles in modern wireless communication standards.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Users should consult NXP directly for lifecycle status updates or recommended alternatives if this component reaches end-of-life.
