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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI400
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.69GHz
- Gain：16.3dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：450 mA
- Power - Output：15.5W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-400-240
- Supplier Device Package：NI-400-240
- Configuration：-
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Overview
The MRF8S26060HR3 is an LDMOS RF power transistor manufactured by NXP USA Inc., designed for high-frequency applications. It operates at a frequency of 2.69 GHz with a gain of 16.3 dB and delivers up to 15.5 W of output power. The device features a test voltage of 28 V and a maximum rated voltage of 65 V, with a test current of 450 mA. Packaged in the NI-400-240 format, this component is currently obsolete and not recommended for new designs.
Feature Summary
- High-performance LDMOS technology optimized for RF power amplification
- Designed for operation in industrial, scientific, and medical (ISM) frequency bands
- Robust electrical characteristics including 65 V maximum rated voltage
Applications
- Industrial, Scientific, and Medical (ISM) equipment
- RF power amplifier stages
- Wireless communication infrastructure
Procurement Notes
This component is officially marked as obsolete by NXP USA Inc. Procurement should focus on verifying the authenticity of existing stock from authorized distributors or secondary markets. Buyers must confirm the physical condition and testing status of available units, as no new production is supported. Ensure compliance with RoHS3 specifications if required by the end application.
Selection Notes
Engineers seeking a replacement for the MRF8S26060HR3 should evaluate newer LDMOS devices from the same manufacturer that offer similar power levels and frequency ranges. Consider factors such as package compatibility, thermal management requirements, and updated gain characteristics when selecting an alternative component for redesign projects.
Part Context
The MRF8 series represents NXP's line of high-voltage LDMOS transistors tailored for RF applications. This specific model targets the 2.69 GHz band, providing a balance of power output and efficiency. Its design supports robust performance in demanding environments typical of ISM applications.
Replacement Considerations
No public confirmed substitute part numbers are listed in the provided documentation. Users should consult NXP's official product selection guides for modern equivalents.
