MRF9045LR5

MRF9045LR5

$24.64
  • Description:RF MOSFET LDMOS 28V NI360
  • Series:-

SKU:786a53e31f1d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:945MHz
  • Gain:18.8dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:350 mA
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:NI-360
  • Supplier Device Package:NI-360 Short Lead
  • Configuration:-

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MRF9045LR5

Overview

The MRF9045LR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at 28 volts with a drain-source voltage rating of 65 Vdc. Typical performance at 945 MHz includes 45 Watts PEP output power, 18.8 dB power gain, and 42% efficiency. The device handles 10:1 VSWR at 45 Watts CW output power.

Feature Summary

  • Integrated ESD protection
  • Designed for maximum gain and insertion phase flatness
  • Excellent thermal stability
  • Characterized with series equivalent large-signal impedance parameters

Applications

  • Broadband commercial applications
  • Industrial applications
  • Large-signal common-source amplifier applications in base station equipment

Procurement Notes

Verify the datasheet revision number (Rev 11) and document number (MRF9045) against official Freescale/NXP records. Confirm that the LR5 suffix corresponds to the NI-360 package variant with low gold plating thickness on leads as specified in the feature list. Ensure compatibility with the 28V DC operating environment.

Selection Notes

Select this component for designs requiring high gain and broadband performance up to 1 GHz. Verify thermal management requirements based on the junction-to-case thermal resistance values provided in Table 2. Ensure the application circuit can handle the specified 10:1 VSWR capability without exceeding the maximum ratings defined in Table 1.

Part Context

This part belongs to the RF Power Field Effect Transistors category from Freescale Semiconductor. It is specifically engineered for use in 28-volt base station equipment where high gain and broadband operation are critical. The device utilizes lateral MOSFET technology optimized for large-signal amplification.

Replacement Considerations

MRF9045LSR1

FAQ

What is the typical power gain at 945 MHz?

The typical power gain is 18.8 dB at 945 MHz with 28 Volts and 45 Watts PEP output power.

Does the device include ESD protection?

Yes, the MRF9045LR5 features integrated ESD protection.

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDSS) rating is +65 Vdc.

MRF9045LR5MRF9045LR5
$24.64
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