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The MRF9045LR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at 28 volts with a drain-source voltage rating of 65 Vdc. Typical performance at 945 MHz includes 45 Watts PEP output power, 18.8 dB power gain, and 42% efficiency. The device handles 10:1 VSWR at 45 Watts CW output power.
Verify the datasheet revision number (Rev 11) and document number (MRF9045) against official Freescale/NXP records. Confirm that the LR5 suffix corresponds to the NI-360 package variant with low gold plating thickness on leads as specified in the feature list. Ensure compatibility with the 28V DC operating environment.
Select this component for designs requiring high gain and broadband performance up to 1 GHz. Verify thermal management requirements based on the junction-to-case thermal resistance values provided in Table 2. Ensure the application circuit can handle the specified 10:1 VSWR capability without exceeding the maximum ratings defined in Table 1.
This part belongs to the RF Power Field Effect Transistors category from Freescale Semiconductor. It is specifically engineered for use in 28-volt base station equipment where high gain and broadband operation are critical. The device utilizes lateral MOSFET technology optimized for large-signal amplification.
MRF9045LSR1
The typical power gain is 18.8 dB at 945 MHz with 28 Volts and 45 Watts PEP output power.
Yes, the MRF9045LR5 features integrated ESD protection.
The maximum Drain-Source Voltage (VDSS) rating is +65 Vdc.