MRF9045LSR5

MRF9045LSR5

$29.18
  • Description:RF MOSFET LDMOS 28V NI360
  • Series:-

SKU:f378da33e48f Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:945MHz
  • Gain:18.8dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:350 mA
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-360S
  • Supplier Device Package:NI-360S
  • Configuration:-

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MRF9045LSR5

Overview

The MRF9045LSR5 is a lateral N-channel LDMOS RF power transistor manufactured by NXP USA Inc. Designed for broadband commercial and industrial applications, it operates at frequencies up to 1 GHz, specifically optimized around 945 MHz. The device delivers 45 W of output power with a typical gain of 18.8 dB when tested at 28 V and 350 mA. It features a breakdown voltage (Vds) of 65 V and utilizes an NI-360S surface-mount package. The component supports operation within a temperature range of -65°C to +150°C.

Feature Summary

  • Broadband RF performance suitable for frequencies up to 1000 MHz
  • High power output capability of 45 W in a compact surface-mount package
  • Lateral N-channel LDMOS technology for robust industrial and commercial use

Applications

  • Broadband commercial RF amplification
  • Industrial RF heating and plasma generation
  • Test and measurement equipment signal sources

Procurement Notes

Verify the specific suffix variant against official NXP documentation, as availability and exact electrical tolerances may differ between NR1, NBR1, and LSR5 designations. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as some variants are marked non-compliant. Check lead times and stock levels carefully due to potential obsolescence notices associated with this product family.

Selection Notes

Select this component for applications requiring high linearity and power density in the 945 MHz band. Ensure the PCB layout supports the NI-360S thermal requirements given the 175 W power dissipation rating. Compare against higher-frequency alternatives if the application exceeds 1 GHz. Validate gate-source voltage limits (-500 mV to +15 V) against the driving circuit capabilities to prevent overstress.

Part Context

This part belongs to the MRF90 series of RF power transistors from NXP Semiconductors. The series is characterized by lateral DMOS construction, offering a balance of power, gain, and efficiency for broadband operations. The MRF9045LSR5 specifically denotes the reel-packaged version in the NI-360S footprint, distinct from the TO-272-2 packaged NR1/NBR1 variants.

Replacement Considerations

Public confirmed substitutes include MRF9045NR1 and MRF9045NBR1, though these utilize different packages (TO-272-2 vs NI-360S). Direct pin-compatible replacements are not explicitly listed in public datasheets; verify mechanical compatibility before substitution.

MRF9045LSR5MRF9045LSR5
$29.18
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