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The MRF9045LSR5 is a lateral N-channel LDMOS RF power transistor manufactured by NXP USA Inc. Designed for broadband commercial and industrial applications, it operates at frequencies up to 1 GHz, specifically optimized around 945 MHz. The device delivers 45 W of output power with a typical gain of 18.8 dB when tested at 28 V and 350 mA. It features a breakdown voltage (Vds) of 65 V and utilizes an NI-360S surface-mount package. The component supports operation within a temperature range of -65°C to +150°C.
Verify the specific suffix variant against official NXP documentation, as availability and exact electrical tolerances may differ between NR1, NBR1, and LSR5 designations. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as some variants are marked non-compliant. Check lead times and stock levels carefully due to potential obsolescence notices associated with this product family.
Select this component for applications requiring high linearity and power density in the 945 MHz band. Ensure the PCB layout supports the NI-360S thermal requirements given the 175 W power dissipation rating. Compare against higher-frequency alternatives if the application exceeds 1 GHz. Validate gate-source voltage limits (-500 mV to +15 V) against the driving circuit capabilities to prevent overstress.
This part belongs to the MRF90 series of RF power transistors from NXP Semiconductors. The series is characterized by lateral DMOS construction, offering a balance of power, gain, and efficiency for broadband operations. The MRF9045LSR5 specifically denotes the reel-packaged version in the NI-360S footprint, distinct from the TO-272-2 packaged NR1/NBR1 variants.
Public confirmed substitutes include MRF9045NR1 and MRF9045NBR1, though these utilize different packages (TO-272-2 vs NI-360S). Direct pin-compatible replacements are not explicitly listed in public datasheets; verify mechanical compatibility before substitution.