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The MRF9060MR1 is a lateral N-channel enhancement-mode RF power MOSFET designed for broadband commercial and industrial applications up to 1.0 GHz. It operates at 26 volts, delivering 60 watts of continuous wave output power with typical two-tone performance metrics including 17 dB power gain, 40% efficiency, and -31 dBc IMD at 945 MHz. The device features integrated ESD protection, excellent thermal stability, and VSWR capability of 10:1. Packaged in TO-270AA surface mount format, the R1 suffix indicates tape and reel packaging containing 500 units per 32 mm, 13 inch reel.
Verify the specific ordering suffix R1 confirms the tape and reel packaging configuration containing 500 units. Ensure the component designation matches the MRF9060 family specifications rather than similar part numbers like MRF5S19060NR1 which may differ in channel type or pinout. Cross-reference the manufacturer documentation to confirm the TO-270AA package variant and electrical ratings align with the intended 26V operational requirements.
Select this component for high-gain broadband applications requiring 60W output at frequencies near 945 MHz. The lateral MOSFET structure provides superior phase flatness compared to vertical devices. Consider the 10:1 VSWR tolerance when designing matching networks for varying load conditions. The surface-mount form factor facilitates automated assembly in dense PCB layouts for base station infrastructure.
This device belongs to the RF Sub-Micron MOSFET line manufactured by Freescale Semiconductor, now part of NXP Semiconductors. The MRF9060 series is engineered specifically for UHF band operations where high linearity and power density are critical. The MR1 suffix denotes the specific reel packaging variant within the broader MRF9060 product family, distinguishing it from bulk or leaded alternatives.
Direct substitutes include other members of the MRF9060 family such as MRF9060LR1 or MRF9060LSR1, provided the packaging and electrical characteristics match the system requirements. Verify that any replacement maintains the same N-channel lateral MOSFET architecture and 26V operating voltage to ensure compatibility with existing biasing and matching networks.
The device is designed for broadband applications with frequencies up to 1.0 GHz.
Yes, the component includes integrated electrostatic discharge (ESD) protection.
The R1 suffix specifies that the device is supplied in tape and reel packaging with 500 units per 32 mm, 13 inch reel.