MRF9120LR3

$95.21

Description：RF MOSFET LDMOS 26V NI860
Series：-

SKU:ef1f3e52925f Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 26V NI860
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：880MHz
Gain：16.5dB
Voltage - Test：26 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1:00 AM
Power - Output：120W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-860
Supplier Device Package：NI-860
Configuration：-

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MRF9120LR3

Overview

The MRF9120LR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications operating between 865 MHz and 895 MHz. It provides high gain and broadband performance, making it suitable for large-signal, common source amplifier configurations in 26-volt base station equipment. The device features integrated ESD protection and excellent thermal stability.

Feature Summary

Designed for maximum gain and insertion phase flatness across the specified frequency range
Capable of handling 10:1 VSWR under rated operating conditions
Characterized with series equivalent large-signal impedance parameters
Includes integrated electrostatic discharge (ESD) protection

Applications

Large-signal, common source amplifier applications in 26 volt base station equipment
Broadband commercial applications within the 865 to 895 MHz frequency band
Industrial applications requiring wideband RF power amplification

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and lead plating specifications matching the 'L' suffix requirement. Ensure storage and handling procedures adhere to the specified moisture sensitivity levels and static control guidelines to maintain device integrity prior to assembly.

Selection Notes

Evaluate thermal management requirements based on a junction-to-case thermal resistance of 0.45 °C/W. Ensure the application circuit supports the required 26 Vdc drain supply voltage. Verify that the input and output matching networks align with the provided series equivalent large-signal impedance parameters for optimal power transfer and efficiency at the target operating frequencies.

Part Context

This component belongs to the Freescale Semiconductor RF Power Field Effect Transistors product line. It is specifically engineered as a lateral N-channel enhancement-mode MOSFET. The device utilizes the CASE 375B-04 package style and is supplied in tape and reel packaging, designated by the R3 suffix indicating 250 units per reel.