MRF9120LR5

Overview

The MRF9120LR5 is a lateral N-channel RF power MOSFET designed for broadband commercial and industrial applications. It operates at a frequency of 880 MHz with a test voltage of 26 V. The device delivers an output power of 120 W and provides a gain of 16.5 dB. This component is part of the NI-860 series, engineered to support frequencies ranging from 865 to 895 MHz.

Feature Summary

• Lateral N-channel RF power MOSFET construction
• Broadband performance capability across specified frequency ranges
• High gain characteristics for efficient signal amplification

Applications

• Commercial wireless communication systems
• Industrial wireless communication systems
• Broadband RF amplifier modules

Procurement Notes

Verify the specific suffix 'LR5' against official NXP documentation to confirm package type and tape/reel specifications. Ensure compatibility with NI-860 series design guidelines. Confirm RoHS compliance status through current manufacturer declarations. Cross-reference datasheet revisions to validate electrical parameters before integration into final designs.

Selection Notes

Select this component for applications requiring high power output within the 865 to 895 MHz band. Consider the 26 V operating voltage and thermal management requirements associated with 120 W output. Evaluate the 16.5 dB gain against system noise figure and linearity needs. Ensure the lateral MOSFET technology aligns with the intended broadband application constraints.

Part Context

This device belongs to the MRF9120 series by NXP Semiconductors, targeting the GSM/DCS bands. It utilizes lateral DMOS technology optimized for RF power amplification. The LR5 suffix typically denotes a specific packaging configuration, such as leadless surface mount, distinct from other variants in the family.

Replacement Considerations

Direct substitutes include other MRF9120 variants like MRF9120S if package differences are acceptable. Verify pinout and thermal pad configurations when cross-referencing with competing brands offering similar 120 W, 880 MHz lateral MOSFET solutions.