MRF9135LSR3

Overview

The MRF9135LSR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications operating between 865 MHz and 895 MHz. It delivers 25 Watts average output power with 17.8 dB gain and 25% efficiency at 880 MHz under 26 Vdc bias. The device withstands 135 Watts CW output while handling a 10:1 VSWR mismatch stress. It features internal matching, integrated ESD protection, and excellent thermal stability.

Feature Summary

• Internally matched for simplified circuit integration
• High gain, high efficiency, and high linearity performance
• Integrated electrostatic discharge (ESD) protection
• Designed for maximum gain and insertion phase flatness

Applications

• Large-signal common-source amplifier applications in base station equipment
• Broadband commercial applications
• Industrial applications

Procurement Notes

Verify the component against the official Freescale Semiconductor datasheet document number MRF9135L, revision 7, dated August 2005. Confirm that the package style matches CASE 465A-06, Style 1, NI-780S. Ensure the ordering suffix R3 corresponds to the specified tape and reel packaging configuration containing 250 units per 32 mm, 13-inch reel as documented in the source material.

Selection Notes

Select this component for designs requiring robust RF power amplification within the 865 MHz to 895 MHz frequency range. The device is suitable for systems utilizing a 26 Vdc supply voltage. Consider its capability to handle significant mismatch stress when designing output networks. Verify that the application environment supports the specified junction temperature limits and thermal dissipation requirements outlined in the electrical characteristics.

Part Context

This part belongs to the family of N-Channel Enhancement-Mode Lateral MOSFETs manufactured by Freescale Semiconductor. These devices are specifically engineered for RF power applications where high gain and broadband performance are critical. The MRF9135LSR3 variant utilizes a ceramic metal-sealed cofired package designed for reliable operation in demanding base station environments.

Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Cross-referencing should be performed using the Part Number Search tool provided by the manufacturer to ensure functional compatibility.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is +65 Vdc.

How does the device perform under mismatch conditions?

The device is capable of handling a 10:1 VSWR at 26 Vdc and 880 MHz with 135 Watts CW output power without degradation in output power.

What is the typical adjacent channel power ratio?

At 880 MHz with 25 Watts average output power, the adjacent channel power ratio is -47 dBc at a 750 kHz channel spacing.