MRFE6P3300HR5

$154.96

Description：RF MOSFET LDMOS 32V NI860C3
Series：-

SKU:fc0e832d2928 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 32V NI860C3
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：857MHz ~ 863MHz
Gain：20.4dB
Voltage - Test：32 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：1.6 A
Power - Output：270W
Voltage - Rated：66 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-860C3
Supplier Device Package：NI-860C3
Configuration：-

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MRFE6P3300HR5

Overview

The MRFE6P3300HR5 is a lateral N-channel RF power MOSFET designed for broadband commercial and industrial applications operating between 470 and 860 MHz. It features high gain and broadband performance, making it suitable for large-signal common-source amplifier configurations in 32-volt analog or digital television transmitter equipment. The device is qualified for operation up to a maximum of 32 VDD and includes integrated ESD protection.

Feature Summary

Internally matched input and output networks for ease of use
Designed specifically for push-pull operation only
Capable of handling 10:1 VSWR with enhanced ruggedness

Applications

Large-signal common-source amplifier applications
Analog television transmitter equipment
Digital television transmitter equipment

Procurement Notes

Verify the specific ordering suffix R5 against current distributor catalogs to confirm availability and reel specifications. Confirm RoHS compliance status as documentation indicates historical revisions. Ensure the procurement matches the exact part number required for push-pull configurations.

Selection Notes

Select this component exclusively for push-pull amplifier designs due to internal matching requirements. Validate that the system operates within the 32 Vdc drain voltage limit. Ensure thermal management supports the specified junction temperature range for reliable long-term operation.

Part Context

This device belongs to the Freescale Semiconductor RF Power Field Effect Transistor family. It is characterized by series equivalent large-signal impedance parameters. The product line targets high-power RF applications requiring robust performance in broadcast infrastructure environments.

Replacement Considerations

Refer to PCN13420 regarding the removal of the MRFE6P3300HR5 from the datasheet. Consult official manufacturer channels for verified substitute part numbers or updated product lifecycle information.