MRFE6S9045NR1

Overview

The MRFE6S9045NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a maximum drain-source voltage of 66 Vdc and a maximum operation voltage of 32 Vdc. The device delivers 45 W output power in GSM applications across the 920-960 MHz band with 20 dB gain and 68% efficiency. In GSM EDGE mode, it provides 16 W average output power with 20 dB gain and 46% efficiency. For single-carrier N-CDMA signals at 880 MHz, it achieves 10 W average output power with 22.1 dB gain and 32% efficiency.

Feature Summary

• Broadband performance optimized for frequencies up to 1000 MHz
• Integrated electrostatic discharge protection
• High thermal stability with junction temperature capability up to 225°C
• Characterized using series equivalent large-signal impedance parameters

Applications

• Large-signal common-source amplifier applications in 28 volt base station equipment
• GSM EDGE cellular communication systems
• Industrial, scientific, and medical (ISM) applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status as indicated on official documentation. Ensure proper handling procedures are followed due to moisture sensitivity level 3 classification. Validate package integrity prior to installation to maintain specified electrical characteristics.

Selection Notes

Select this transistor for designs requiring high gain and broadband operation within the 850 to 960 MHz range. Consider the 28 Vdc operating voltage requirement and 350 mA quiescent current specifications. Evaluate thermal management needs given the 225°C junction temperature capability and plastic package constraints.

Part Context

This RF power field effect transistor belongs to the Freescale Semiconductor product line, now part of NXP USA Inc. It utilizes lateral MOSFET technology specifically engineered for robust performance in demanding radio frequency environments. The component is supplied in tape and reel packaging for automated assembly processes.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Cross-reference electrical parameters and physical dimensions before implementation.

FAQ

What is the maximum junction temperature rating?

The maximum operating junction temperature is rated at 225°C.

How does the device perform under load mismatch conditions?

It is capable of handling 5:1 VSWR at 32 Vdc and 880 MHz with 3 dB overdrive, demonstrating enhanced ruggedness.

What is the typical power gain in GSM EDGE applications?

The typical power gain is 20 dB when delivering 16 Watts average output power across the 920-960 MHz band.