MRFE6S9135HR3

Overview

The MRFE6S9135HR3 is an N-channel enhancement-mode LDMOS RF power transistor designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a 28 V supply with a 66 V rating, delivering 39 W average output power in single-carrier W-CDMA configurations. The device features high gain and broadband performance, making it suitable for large-signal common-source amplifier applications in base station equipment. Packaged in the NI-880 format, it ensures reliable operation in demanding RF environments.

Feature Summary

• High gain and broadband performance optimized for frequencies up to 1000 MHz
• Designed for large-signal common-source amplifier applications in base station equipment
• Robust N-channel LDMOS construction ensuring safe operation at 66 V ratings

Applications

• Broadband commercial and industrial applications
• Single-carrier W-CDMA systems
• Base station equipment amplifiers

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific packaging details prior to order placement. Ensure storage conditions adhere to moisture sensitivity level requirements to maintain device integrity during assembly processes.

Selection Notes

Select this component for designs requiring high linearity and efficiency in broadband RF amplification. Consider thermal management capabilities due to significant power dissipation. Evaluate impedance matching networks to optimize gain and stability across the specified frequency range for target application performance.

Part Context

Part of the MRFE6 series from Freescale Semiconductor, focusing on LDMOS technology for RF power applications. This model specifically targets the 900 MHz band, offering a balance between power output and bandwidth for modern communication infrastructure needs.

Replacement Considerations

Consult official substitution lists for compatible alternatives such as the MRFE6S9135HSR3. Verify pinout compatibility and electrical parameter equivalence before implementing any cross-replacement in existing designs.