MRFE6S9160HSR3

Overview

The MRFE6S9160HSR3 is an RF power MOSFET transistor from the HV6E series, manufactured by NXP Semiconductors. It operates at a frequency of 900 MHz with a power output of 160 W. The device utilizes Silicon technology and features an N-Channel configuration. Key electrical parameters include a drain-source breakdown voltage (Vds) of 66 V and gate-source voltage limits ranging from -500 mV to +12 V. It is housed in the NI780S surface-mount package and supports operating temperatures between -65°C and +150°C.

Feature Summary

• High-power RF performance optimized for 900 MHz applications
• Robust thermal stability supporting high junction temperatures up to 150°C
• Surface-mount construction for automated assembly integration

Applications

• Base station transmitter modules
• Broadband RF power amplification
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm datasheet revisions match design requirements. Check RoHS compliance documentation for regulatory adherence. Validate package integrity upon receipt. Ensure static-safe handling procedures are followed during installation.

Selection Notes

Evaluate thermal management capabilities given the 160 W output requirement. Compare Vds ratings against circuit supply voltages to ensure safety margins. Consider the NI780S footprint for PCB layout constraints. Assess gain characteristics relative to amplifier efficiency targets. Verify compatibility with existing biasing networks.

Part Context

This component belongs to the MRFE6S9160H family of RF MOSFETs designed for high-efficiency power amplification. It represents a transition from Freescale Semiconductor to NXP Semiconductors branding while maintaining technical continuity. The device is engineered for robust performance in demanding radio frequency environments.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified sources.