MRFE6VP61K25NR6

$156.88

Description：RF MOSFET LDMOS 50V OM1230-4
Series：-

SKU:4b3b0fbeb3dd Category: RF FETs, MOSFETs Brand: NXP USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 50V OM1230-4
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：LDMOS
Frequency：230MHz
Gain：23dB
Voltage - Test：50 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：100 mA
Power - Output：1250W
Voltage - Rated：133 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：OM-1230-4L
Supplier Device Package：OM-1230-4L
Configuration：Dual

Download product information

MRFE6VP61K25NR6

Overview

The MRFE6VP61K25NR6 is a sub-ghz development tool manufactured by NXP Semiconductors. It serves as a VHF reference circuit designed for the evaluation of the MRFE6VP61K25H transistor. The operating frequency range is specified from 174 MHz to 230 MHz, and it utilizes a working supply voltage of 50 V.

Feature Summary

Provides a dedicated reference circuit for evaluating RF power performance
Designed specifically for VHF band applications

Applications

Sub-ghz development
VHF reference circuit evaluation

Procurement Notes

Verify current availability directly with NXP Semiconductors or authorized distributors. Confirm specific ordering requirements and factory special order status before proceeding. Ensure compatibility with the target MRFE6VP61K25H component for accurate assessment.

Selection Notes

Select this tool when a physical reference circuit is required for the MRFE6VP61K25H device within the 174 MHz to 230 MHz range. It supports hardware validation rather than simulation-only workflows.

Part Context

This item belongs to the sub-ghz development tools category under NXP Semiconductors. It functions as a reference design board intended to assist in the characterization of the associated high-power RF transistor model.