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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI1230
- Series：-
- Mfr：NXP Semiconductors
- Package：Bulk
- Technology：LDMOS
- Frequency：470MHz ~ 860MHz
- Gain：19.3dB
- Voltage - Test：50 V
- Current Rating (Amps)：20µA
- Noise Figure：-
- Current - Test：1.4 A
- Power - Output：600W
- Voltage - Rated：130 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-1230
- Supplier Device Package：NI-1230
- Configuration：Dual, Common Source
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Overview
The MRFE6VP8600HR5 is a high ruggedness N-Channel enhancement-mode Lateral MOSFET optimized for broadband operation from 470 to 860 MHz. It features an integrated input matching network and is designed for analog or digital television transmitters. The device delivers 600 W CW output power with adequate thermal management, capable of handling >65:1 VSWR at 860 MHz. Electrical characteristics include a drain-source breakdown voltage of 130 Vdc minimum, gate-source voltage range of -6.0 to +10 Vdc, and forward transconductance of 15.6 S typical.
Feature Summary
- Integrated input matching network for improved power distribution
- High ruggedness capable of handling extreme VSWR conditions
- Extended negative gate-source voltage range for Class C performance
- Characterized from 20 V to 50 V for drain modulation applications
Applications
- Analog television transmitters
- Digital television transmitters
- DVB-T (8k OFDM) broadcasting systems
Procurement Notes
Verify the specific suffix R5 indicates a reel quantity of 50 units on a 13-inch reel with 56 mm tape width. Confirm RoHS compliance status through official documentation. Ensure sourcing channels provide valid traceability for this discontinued Freescale/NXP product line.
Selection Notes
Select this component for UHF TV spectrum applications requiring full performance across 470-860 MHz. Consider its push-pull configuration capability and thermal resistance of 0.19 °C/W. Evaluate suitability for Class AB or Doherty peaking stages due to extended gate voltage range.
Part Context
This part belongs to the MRFE6VP8600H family of RF Power LDMOS Transistors. It shares specifications with variants like MRFE6VP8600HR6, differing primarily in packaging quantities. Originally manufactured by Freescale Semiconductor, it is now under NXP Semiconductors.
Replacement Considerations
MRFE6VP8600HR6 serves as a direct functional substitute with identical electrical parameters. Verify package compatibility and ensure the replacement variant meets the required reel quantity specifications for the manufacturing process.
