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The MRFG35005ANT1 is a Gallium Arsenide PHEMT RF power field-effect transistor designed for wireless local loop, MMDS, and BWA applications across the 500 to 5000 MHz frequency range. It operates at a drain voltage of 12 Vdc with a quiescent current of 80 mA. The device delivers a typical single-carrier W-CDMA output power of 450 mWatts average at 3550 MHz, achieving a power gain of 11 dB and a drain efficiency of 26%. It provides a CW P1dB of 4.5 Watts at 3550 MHz and maintains an ACPR of -44 dBc in a 3.84 MHz channel bandwidth.
Verify the specific ordering suffix T1 confirms tape and reel packaging containing 1000 units on a 12 mm, 7 inch reel. Confirm that the component is sourced from Freescale Semiconductor or its authorized successors, as NXP USA Inc. acquired these assets. Ensure the datasheet revision matches the required manufacturing lot specifications.
Select this component for broadband RF driver stages requiring high linearity and moderate power output between 500 and 5000 MHz. The unmatched architecture reduces external matching network complexity. Verify thermal management capabilities against the junction-to-case thermal resistance rating for the intended enclosure environment.
This device belongs to the GaAs PHEMT family of RF power transistors originally manufactured by Freescale Semiconductor. The product line targets fixed wireless access infrastructure and base station driver amplifiers. The technology utilizes gallium arsenide material properties to achieve high electron mobility and efficient power conversion at microwave frequencies.
Consult official cross-reference documentation for verified substitutes. No public substitute part numbers are confirmed in the provided source material.