MRFG35010AR1

MRFG35010AR1

$35.38
  • Description:RF MOSFET PHEMT FET 12V NI360
  • Series:-

SKU:3227d4c0468b Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 12V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:pHEMT FET
  • Frequency:3.55GHz
  • Gain:10dB
  • Voltage - Test:12 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:140 mA
  • Power - Output:1W
  • Voltage - Rated:15 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-360HF
  • Supplier Device Package:NI-360HF
  • Configuration:-

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MRFG35010AR1

Overview

The MRFG35010AR1 is a Gallium Arsenide PHEMT RF Power Field Effect Transistor designed for linear base station applications. It operates from 500 to 5000 MHz and delivers 10 Watts of output power at the 1 dB compression point (P1dB) at 3550 MHz under continuous wave conditions with a 12 Vdc drain supply. The device supports Class A and Class AB operation, providing high gain and efficiency suitable for wideband modulation schemes.

Feature Summary

  • High linearity performance characterized by excellent phase linearity and group delay characteristics.
  • Suitable for linear base station driver and final amplifier configurations in Class A or Class AB modes.
  • Internally unmatched design requiring external matching networks for optimal impedance transformation.

Applications

  • WiMAX driver and final stages
  • WLL/MMDS transmitter systems
  • UMTS linear amplification

Procurement Notes

Verify the specific R1 suffix indicates tape and reel packaging containing 500 units on a 32 mm, 13 inch reel. Confirm RoHS compliance status matches current manufacturing standards. Ensure the ordering part number aligns exactly with the Freescale Semiconductor data sheet revision history to avoid discrepancies in package style or electrical testing parameters.

Selection Notes

Select this component for designs requiring high linearity and moderate power output in the 3.5 GHz band. The device requires careful thermal management due to its junction-to-case thermal resistance ratings. Designers must implement appropriate input and output matching networks to achieve the specified S-parameter performance and power gain targets across the operating frequency range.

Part Context

This device belongs to the GaAs PHEMT family of RF power transistors manufactured by Freescale Semiconductor. It utilizes a CASE 360D-02 surface mount package style. The technology is optimized for broadband wireless communication infrastructure where signal fidelity and power efficiency are critical requirements for modern cellular and broadband access networks.

Replacement Considerations

Consult official manufacturer documentation for direct pin-compatible substitutes. Verify that any alternative devices match the required 12 Vdc operating voltage and provide equivalent P1dB and ACPR specifications at 3550 MHz to maintain system performance integrity.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) rating is 15 Vdc.

How is the device packaged?

The MRFG35010AR1 is housed in a CASE 360D-02 surface mount package with Style 1 pin configuration.

Is the device internally matched?

No, the device is unmatched and requires external input and output matching networks for proper operation.

MRFG35010AR1MRFG35010AR1
$35.38
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