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Product Detailed Parameters
- Description：JFET 3-PIN
- Series：*
- Mfr：Freescale Semiconductor
- Package：Bulk
- FET Type：-
- Voltage - Breakdown (V(BR)GSS)：-
- Drain to Source Voltage (Vdss)：-
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Download product information
Overview
The MRFG35010MR5 is a Gallium Arsenide (GaAs) pHEMT RF Power Field Effect Transistor manufactured by Freescale Semiconductor. Designed for driver applications in wireless local loop, multimedia messaging data service, and broadband wireless access systems, it operates within the frequency range of 500 to 5000 MHz. The device delivers 3 Watts of output power at P1dB when operating at 3550 MHz with a 6V drain supply. It features high gain, high efficiency, and excellent phase linearity characteristics suitable for Class AB operation in customer premise equipment.
Feature Summary
- Utilizes GaAs pHEMT technology for high performance
- Designed for unmatched RF power amplifier applications
- Provides excellent phase linearity and group delay characteristics
- Suitable for Class AB operation in CPE applications
Applications
- Wireless Local Loop (WLL) driver stages
- Multimedia Messaging Data Service (MMDS) amplification
- Broadband Wireless Access (BWA) systems
- UMTS driver applications
Procurement Notes
Verify the specific suffix 'MR5' against official documentation to confirm tape and reel packaging specifications. Confirm RoHS compliance status through current datasheets as manufacturing processes may evolve. Ensure the component meets the required frequency and power specifications for your specific RF design before integration.
Selection Notes
Select this component for designs requiring a single-stage driver solution in the 500-5000 MHz range. It is appropriate for applications needing high linearity and efficiency without external matching networks. Consider thermal management requirements for Class AB operation and ensure the system voltage aligns with the 6V typical drain supply specification.
Part Context
This part belongs to the MRFG series of Gallium Arsenide pHEMT RF Power FETs from Freescale Semiconductor. These devices are engineered specifically for RF driver stages in communication infrastructure. The series emphasizes high gain and linearity, making them standard choices for cellular and wireless broadband base station or customer premise equipment front-ends.
Replacement Considerations
Consult official substitution guides for equivalent GaAs pHEMT devices from NXP or other manufacturers. Verify pin compatibility and electrical parameters such as P1dB and gain across the 500-5000 MHz band before replacing.
