MS1001A

Overview

The MS1001A is an NPN RF bipolar junction transistor manufactured by Microsemi Corporation, designed for high-power radio frequency applications. It features a maximum collector-emitter breakdown voltage of 18V and a continuous collector current rating of 20A. The device supports a maximum power dissipation of 270W with a transition frequency of 30MHz. It offers a minimum DC current gain (hFE) of 20 at 5A and 5V conditions. The component utilizes an M174 base mount package and operates at a junction temperature up to 200°C. With a typical gain of 13dB, it is suited for robust RF amplification tasks.

Feature Summary

• High power handling capability with 270W maximum dissipation
• Optimized for RF amplification with 30MHz transition frequency
• Robust construction using M174 base mount packaging
• Capable of sustaining 20A collector current under operational limits

Applications

• RF power amplification stages
• Military communication systems
• Industrial radar transmitters

Procurement Notes

Verify the specific suffix designation carefully as the MS1001A may represent a variant of the standard MS1001. Confirm availability status since the base model is marked as obsolete in public records. Ensure the supplier provides official Microsemi documentation to validate the exact electrical characteristics and pinout configuration before integration into designs.

Selection Notes

Select this component when designing circuits requiring high current drive and moderate frequency operation up to 30MHz. The 18V breakdown voltage suits low-voltage RF power stages. Consider thermal management requirements due to the 270W power rating and ensure the PCB layout accommodates the M174 base mount footprint for proper heat dissipation and mechanical stability.

Part Context

The MS1001A belongs to the family of high-power RF transistors produced by Microsemi. These devices are engineered for demanding environments where reliability and power density are critical. The NPN configuration allows for efficient signal amplification in linear and switching modes within the specified frequency range, serving as a core active element in transmitter output stages.

Replacement Considerations

Publicly confirmed substitute part numbers for the MS1001A are not available in the provided source data. Engineers should consult Microsemi technical support or authorized distributors for verified cross-reference information regarding equivalent components that match the M174 package and electrical specifications.