MS1004

Overview

The MS1004 is a silicon NPN RF bipolar junction transistor manufactured by Microsemi Corporation. It is designed for high-power radio frequency applications, featuring a maximum collector current of 40A and a collector-emitter breakdown voltage of 55V. The device operates at a transition frequency of 30MHz with a power dissipation capacity of 330W. It utilizes an M177 base-mount package suitable for robust thermal management. Key electrical characteristics include a DC current gain (hFE) of 15 at 10A and 6V, and a typical gain of 14.5dB. The component supports a maximum junction temperature of 200°C.

Feature Summary

• High power handling capability with 330W dissipation rating
• Robust mechanical construction via M177 base-mount package
• Optimized for radio frequency signal amplification
• Capable of sustaining high collector currents up to 40A

Applications

• RF power amplifier stages in communication systems
• Industrial radio frequency heating equipment
• Military radar transmitter modules
• Broadcast transmission infrastructure

Procurement Notes

Verify the specific manufacturing origin and screening level required for your application, as Microsemi products often offer various reliability grades. Confirm that the M177 mounting interface matches your thermal solution design. Check for any recent product change notifications or end-of-life status updates from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring high current drive at RF frequencies around 30MHz. Ensure the thermal management system can handle 330W dissipation while maintaining the junction temperature below 200°C. Verify that the 55V breakdown voltage provides sufficient headroom for the intended supply rails and load conditions.

Part Context

The MS1004 belongs to the family of high-power RF bipolar transistors produced by Microsemi, formerly Microchip's defense and aerospace division. These components are engineered for demanding environments where reliability and power density are critical. The M177 package standard ensures compatibility with established military and industrial mounting hardware.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate other high-power NPN RF transistors with similar M177 packaging, 30MHz transition frequency, and comparable 330W power ratings for potential cross-referencing.