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The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. It features emitter ballasting and utilizes a chassis-mount package. The device has a collector-emitter breakdown voltage of 55V and a transition frequency of 30MHz. Maximum collector current is 10A with a power dissipation of 233W. DC current gain is 18 at 1.4A and 6V. Operating junction temperature reaches 200°C.
This component is officially listed as obsolete or end-of-life by the manufacturer. Verification of availability through authorized distributors is required, as standard supply channels may not stock this item. Buyers should confirm the specific discontinuance notification date and check for valid replacement part numbers before initiating procurement processes.
Select this component only if its specific 55V breakdown voltage and 30MHz transition frequency align with the design requirements. The chassis-mount form factor necessitates compatible mechanical mounting solutions. Consider the 233W power dissipation capability when designing thermal management systems for the application environment.
The MS1007 belongs to the category of RF bipolar transistors manufactured by Microchip Technology, formerly Microsemi Corporation. It serves as a discrete semiconductor solution for high-power RF applications. The product line focuses on aerospace, defense, and communications sectors where reliability under harsh conditions is critical.
No public confirmed substitute part numbers are available in the provided documentation. Due to the obsolete status, engineers must evaluate alternative components that match the electrical specifications and mechanical footprint requirements.