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Product Detailed Parameters
- Description：N Channel MOSFET,100V,SOT-23
- Series：SOT-23
- Mfr：Bruckewell
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：1.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：310mOhm @ 1A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23
- Package / Case：TO-236-3, SC-59, SOT-23-3
Download product information
Overview
The MS100N01 is a high-performance N-channel MOSFET utilizing advanced trench technology with extreme cell density. It provides excellent RDS(ON) and gate charge characteristics for small power switching applications. The device features a Drain-Source Voltage of 100 V, Continuous Drain Current of 1.2 A at 25°C, and Static Drain-Source On-Resistance of 260 mΩ at VGS=10V. Total Gate Charge is typically 9.7 nC. Operating Junction Temperature ranges from -55 to +150 °C.
Feature Summary
- Advanced high cell density Trench technology
- Low RDS(ON)
- Low Gate Charge
- Green Device Available
Applications
- PWM Applications
- Load Switch
- Power management
Procurement Notes
Verify the specific datasheet revision (Rev. A -2021) matches your design requirements. Confirm RoHS compliance status as stated in the documentation. Ensure thermal management aligns with the specified junction-to-ambient resistance. Validate that the SOT-23 package dimensions fit your PCB layout constraints before finalizing procurement.
Selection Notes
Select this component for low-voltage, low-current switching tasks requiring efficient thermal performance. Consider the 100 V rating and 1.2 A continuous current limits for circuit design. Evaluate the gate charge specifications against driver capabilities to optimize switching speeds. Verify compatibility with standard surface-mount assembly processes for the SOT-23 package.
Part Context
This discrete semiconductor belongs to Bruckewell Technology's N-channel MOSFET lineup. Designed for system-in-package solutions, it supports modern power management needs. The product adheres to Green Product requirements and meets RoHS standards. It represents a focus on reliability and function within the company's portfolio.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation. Consult official manufacturer channels for cross-reference information if alternative sourcing is required.
