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The MS1261 is an NPN radio frequency bipolar junction transistor (BJT) manufactured by Microsemi Corporation. It is housed in the M122 package and designed for RF applications. The device supports a maximum collector-emitter voltage of 18V and operates with a transition frequency up to 175MHz. This component serves as a discrete semiconductor solution for signal amplification and switching within radio frequency circuits.
Verify the manufacturer designation carefully, as Microsemi was acquired by Microchip Technology Inc. Ensure the specific M122 package variant matches your design requirements. Confirm that the 175MHz transition frequency and 18V rating align with your circuit's operational limits before finalizing procurement.
Select this component when an NPN BJT with 18V tolerance and 175MHz RF capability is required. The M122 package dictates physical layout constraints. Ensure thermal management strategies account for the device's power dissipation characteristics in continuous RF operation environments.
Microsemi Corporation specialized in high-performance analog and mixed-signal integrated circuits prior to its acquisition by Microchip Technology Inc. The MS1261 represents their discrete RF transistor portfolio, targeting aerospace, defense, and communication markets requiring reliable semiconductor components for signal transmission and reception tasks.
Public confirmed substitute part numbers are not available in the provided documentation. Consult Microchip Technology Inc. official resources for current equivalent recommendations or cross-reference options based on specific electrical parameter matching requirements.