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Product Detailed Parameters
- Description：RF TRANS NPN 40V 175MHZ TO-39
- Series：-
- Mfr：Microsemi Corporation
- Package：Bulk
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：40V
- Frequency - Transition：175MHz
- Noise Figure (dB Typ @ f)：-
- Gain：10dB
- Power - Max：7W
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 100mA, 5V
- Current - Collector (Ic) (Max)：1A
- Operating Temperature：200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AD, TO-39-3 Metal Can
- Supplier Device Package：TO-39
- Grade：-
- Qualification：-
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Overview
The MS1409 is a NPN silicon RF transistor designed for high power gain VHF and UHF communication applications. It operates at 175 MHz with a collector-emitter voltage of 40 V and delivers 2.5 W output power. The device features a common emitter configuration, 10 dB minimum power gain, and 7.0 W total power dissipation in a TO-39 package. Key electrical limits include a collector-base voltage of 65 V, peak collector current of 1.0 A, and a junction temperature rating of 200 °C.
Feature Summary
- Gold metalization and diffused emitter ballast resistors provide superior long term reliability.
Applications
- VHF communications
- UHF communication applications
Procurement Notes
Verify the manufacturer origin as Advanced Power Technology rather than Microsemi Corporation when sourcing this component. Confirm the specific datasheet version matches the required electrical parameters. Ensure the TO-39 package dimensions align with the design constraints. Check for any RoHS compliance documentation if required by the assembly process.
Selection Notes
Select this component for designs requiring high power gain at 175 MHz. Ensure the thermal management system can handle the 25 °C/W junction-to-case resistance. Verify that the 40 V collector-emitter voltage rating meets the circuit supply requirements. Consider the 1.0 A peak current limit for load matching.
Part Context
This part is an RF bipolar transistor manufactured by Advanced Power Technology. It belongs to the category of silicon transistors used in radio frequency amplification. The TO-39 metal case package provides robust mechanical support and thermal conductivity for high-power operations.
Replacement Considerations
No verified substitute part numbers are available in the provided documentation. Cross-referencing requires matching the 175 MHz frequency, 2.5 W output power, and TO-39 package specifications.
FAQ
What is the maximum junction temperature for the MS1409?
The maximum junction temperature (TJ) for the MS1409 is 200 ºC.
What is the power gain of the MS1409 at 175 MHz?
The MS1409 provides a minimum power gain (GP) of 10 dB at 175 MHz with a 0.25 W input power and 28 V supply.
What package type does the MS1409 use?
The MS1409 is housed in a TO-39 metal case package.
